Accession Number:

ADA243744

Title:

Application of Silicon Micromachining to Thermal Dissipation Issues in Wafer Scale Integrated Circuits

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1991-12-01

Pagination or Media Count:

276.0

Abstract:

The purpose of this research effort was to investigate the feasibility of applying the silicon micromachining technique to thermal management as applied to integrated circuits and wafer scale integration techniques. Three silicon micromachined structures and an untextured reference wafer were compared as heat-dissipating surfaces. These four surfaces were realized using 3-inch diameter, single crystal silicon wafers. The following structures were micromachined in silicon wafers using wet chemical, anisotropic etching and photolithographic techniques 1 randomly spaced and sized pyramids in 100-oriented silicon, 2 deep vertical-wall grooves in 110-oriented silicon, and 3 micro-fluid channels in 100-oriented silicon. The heat- dissipating silicon wafers were epoxied to silicon wafers hosting heat-producing devices to realize a silicon wafer thermal module, simulating the wafer scale integration packaging technique. Two types of heat-producing devices were compared 1 n-diffused integrated circuit die resistors, and 2 thin-film aluminum resistors. Two configurations of the integrated circuit die were also compared 1 a single, centered, integrated circuit die and 2 four, centered, integrated circuit die.

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE