Evaluation of an Interdigitated Gate Electrode Field-Effect Transistor (IGEFET) for In Situ Resin Cure Monitoring
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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The purpose of this study was to design an Interdigitated Gate Electrode Field-Effect Transistor IGEFET and evaluate its performance as an in situ resin cure monitor. A commercially available resin was selected for the research, and rheological studies were performed to identify the resins gelation point during isothermal cures at two selected temperatures. Additional rheological studies were performed to identify the resins glass transition temperature. The interdigitated gate electrode of the IGEFET was coated with samples of the resin, and electrical measurements were performed while the resin cured. The chemical changes which occur in the resin as a result of curing were manifested in the interdigitated gate electrodes electrical characteristics. The result reveal that the IGEFET is capable of sensing the electrical impedance changes, and hence the chemical changes, which occur during the resins cure. In particular, the chemical changes due to gelation are evident in the IGEFETs electrical response data. In addition, the resin which was cured at the higher temperature was close to its glass transition temperature, and hence softer than the resin cured at the lower temperature, and the IGEFET was capable of detecting this difference.
- Electrical and Electronic Equipment