Accession Number:

ADA243524

Title:

Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

Descriptive Note:

Annual letter rept. 1 Jan-31 Dec 91,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

• Davis, Robert F.

Report Date:

1991-12-01

Pagination or Media Count:

80.0

Abstract:

An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of Al, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of 0001 alpha 6H-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AlN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of 00001 alpha 6H-SiC and 0001 sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski- Krastanov mode of nucleation and growth, while on SiC, characteristics of three- dimensional growth were evident. By contrast, AlN grew initially in a layer-by- layer mode. Deposition of GaN on vicinal 100 beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material.

Descriptors:

• *ULTRAVIOLET RADIATION
• GROWTH(GENERAL)
• CRYSTAL LATTICES
• STRUCTURES
• THIN FILMS
• FABRICATION
• SINGLE CRYSTALS
• SUBSTRATES
• NITRIDES
• NITROGEN
• ELECTRON MICROSCOPY
• THREE DIMENSIONAL
• DEPOSITION
• SAPPHIRE
• X RAY PHOTOELECTRON SPECTROSCOPY
• GROUP III COMPOUNDS
• GROUP V COMPOUNDS
• IRRADIATION
• WAFERS
• ELECTRON DIFFRACTION
• AUGER ELECTRON SPECTROSCOPY
• SOLID SOLUTIONS
• SILICON NITRIDES
• LAYERS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE