Accession Number:

ADA243430

Title:

Gate Drain Geometry Effect on the Current Voltage Characteristics of GaAs MESFETs

Descriptive Note:

Rept. for Jun 88-Nov 89,

Corporate Author:

ROME LAB ROME NY

Personal Author(s):

Report Date:

1991-06-01

Pagination or Media Count:

28.0

Abstract:

We investigated the effect of gate-drain distance on gallium arsenide MESFET current-voltage characteristics. DC characteristics of several GaAs MESFETS are determined and compared to results from a computer implementation of a physically based, analytical model by Chang and Day. Their model is modified to account for the effect of longer gate-drain distance, and shows excellent agreement with measured I-V curves across the full range of device geometrics tested.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE