Accession Number:

ADA243220

Title:

Spatially and Spectrally Resolved Cathodoluminescence Measurements of CVD-Grown Diamond Particles and Films

Descriptive Note:

Technical rept.,

Corporate Author:

NATIONAL INST OF STANDARDS AND TECHNOLOGY GAITHERSBURG MD

Personal Author(s):

• Robins, Lawrence H.
• Farabaugh, Edward N.
• Feldman, Albert

Report Date:

1991-09-27

Pagination or Media Count:

15.0

Abstract:

Spatially and spectrally resolved cathodoluminescence CL was used to investigate the spatial distribution of luminescence centers in CVD-grown diamond particles and polycrystalline films. For single particles grown at a low substrate temperature nominally 650 C, one of the two most intense CL bands, the 2.156 eV band, was found to be associated with 111 facets. The CL image of the other intense band, the 2.85 eV band, showed considerable particle-to- particle variation among the same particles. The images of the 2.156 eV and 2.85 eV CL bands were found to have a complementary relationship for some particles. A model of competing recombination centers is proposed to help explain these results. Cross-sectional measurements of the CL spectra of polycrystalline films on silicon showed that the intensity of a silicon-impurity-related CL band decreases with increasing distance from the film-substrate interface. This depth variation is interpreted as due to a silicon impurity concentration gradient.

Descriptors:

• *SPATIAL DISTRIBUTION
• LOW TEMPERATURE
• INTERFACES
• FILMS
• SUBSTRATES
• IMPURITIES
• DEPTH
• VARIATIONS
• PARTICLES
• SILICON
• CROSS SECTIONS
• CONCENTRATION(COMPOSITION)
• CATHODOLUMINESCENCE
• RECOMBINATION REACTIONS
• LUMINESCENCE
• GRADIENTS
• POLYCRYSTALLINE
• MEASUREMENT

Subject Categories:

• Crystallography
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE