Accession Number:

ADA243148

Title:

Pseudomorphic Narrow Gap Materials for High Performance Devices

Descriptive Note:

Annual technical rept. 15 Dec 1990-14 Dec 1991,

Corporate Author:

COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Wang, Wen I.

Report Date:

1991-10-18

Pagination or Media Count:

9.0

Abstract:

Indium Arsenide field effect transistors 1 micron gate lengths have been fabricated and showed extrinsic intrinsic transconductance as high as 414 mSmm 670mSmm. The cut-off frequency is estimated to be more than a factor of two greater than is typical for GaAs based FETs with comparable gate length. The FET has also been operated at electric fields greater than 20 kVcm without any indication of breakdown, far above the bulk breakdown value of 6 kVcm. Several mechanisms have been proposed to explain this phenomenon. The threshold current densities of separate confinement strained A1GaAsGaAsInGaAs lasers have been shown to insensitive to the quality of the Aluminum Gallium Arsenide outer cladding layers due to the use of a thick GaAs inner cladding layer. We have also shown theoretically that 1 infrared absorption at normal incidence due to intervalence subband transition can be greatly enhanced in light-hole and heavy-hole inverted strained GaInAsAIInAs quantum wells, and 2 with biaxial tensile strain, exciton absorption and saturation limit in quantum wells can be enhanced. Author

Descriptors:

• *DENSITY
• THRESHOLD EFFECTS
• GATES(CIRCUITS)
• ELECTRIC FIELDS
• LASERS
• TRANSCONDUCTANCE
• LIMITATIONS
• LENGTH
• QUANTUM ELECTRONICS
• CONFINEMENT(GENERAL)
• ABSORPTION
• INFRARED RADIATION
• MATERIALS
• SATURATION

Subject Categories:

• Electrical and Electronic Equipment
• Quantum Theory and Relativity
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE