Accession Number:

ADA243098

Title:

Theoretical Crystal-Field Calculations for Rare-Earth Ions in III-V semiconductor Compounds

Descriptive Note:

Summary rept. Jan-Jul 1991

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Report Date:

1991-10-01

Pagination or Media Count:

29.0

Abstract:

This report presents preliminary crystal-field calculations showing the splitting of the Stark levels of three rare-earth-doped III-V semiconductor compounds Yb3 InP, Er3GaAs, and Nd3GaP. The crystal field parameters were obtained from a lattice-sum calculation including monopole, self-induced dipole, and self-induced quadruple contributions. The effects of varying the effective ionic charges and the ionic polarizabilities are explored. For each of the systems considered, these parameters were adjusted to match available experimental data on the ordering of the levels according to irreducible representation, the magnitude of crystal-field splitting, and intensities. A consistent set of parameters was found that gave reasonable results for all the systems considered. Refinements in the crystal field model may be necessary when more experimental data become available.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE