Accession Number:

ADA243093

Title:

High Resolution Electron Microscopy of Diamond Film Growth Defects and their Interactions

Descriptive Note:

Technical rept.

Corporate Author:

NATIONAL INST OF STANDARDS AND TECHNOLOGY GAITHERSBURG MD

Report Date:

1991-09-25

Pagination or Media Count:

25.0

Abstract:

High resolution electron microscopy of plasma-assisted chemical vapor deposition CVD diamond films was performed. The film was fine grained with a grain size of the order of 0.1 micrometer. Several features of the microstructure were studied and their importance to the understanding of the diamond film growth was evaluated. The observation include 1. Twinning density rises as a function of the distance from the center of the crystal. 2. The twins have an important role in the rapid growth of this kind of film. The reentrant angle between intersecting twins serves as a nucleation site for the growth of new 111 planes. 3. The center point of a twin quintuplet has five reentrant angles and thus serves as a preferred nucleation site for new planes as the crystal grows. 4. Misfit boundaries, being the locus of intersection points of the growing planes on two adjacent twins can serve as an indicator for the local crystal growth direction. The central nucleation site serves as an indicator for the local crystal growth direction. The central nucleation site for the growing planes can thus be traced back in many cases to a quintuplet twin point.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE