Accession Number:

ADA242868

Title:

An Kinetics Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon

Descriptive Note:

Interim rept.,

Corporate Author:

NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1991-11-01

Pagination or Media Count:

38.0

Abstract:

The electron cyclotron resonance plasma oxidation of Silicon was investigated using in-situ during process static spectroscopic ellipsometry and dynamic real time ellipsometry at oxidation temperatures between 80 C and 400 C and at various applied bias. Successful optical modeling of the ellipsometric data was accomplished using a two layer model, in which the top layer is a pure silicon dioxide film over an interface layer. The kinetics results are compatible with the Cabrera-Mott theory for the oxidation by charged species in the limit of low electric field. The effect of applied bias suggests that the oxidizing species is O-. The energy activation is 0.18 eV, substantially lower than the thermal oxidation value.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE