Accession Number:

ADA242833

Title:

An In-Situ Spectroscopic Ellipsometry Study of the Electron Cyclotron Resonance Plasma Oxidation of Silicon and Interfacial

Descriptive Note:

Technical rept.,

Corporate Author:

NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1991-11-01

Pagination or Media Count:

15.0

Abstract:

The growth of Silicon dioxide 2 films on Silicon and the evolution of interfacial damage resulting from electron cyclotron resonance plasma oxidation was studied using in situ during process spectroscopic ellipsometry. Accelerated growth under positive substrate bias indicates that negative atomic dominate the growth above an oxide thickness of 4 nm. Below this thickness bias appears less important. The interfacial damage is different in both nature and extent from that caused by ions with higher energies. It appears that the damage layer is composed of SiO2 with a Si and is due to the oxidation reaction rather than the ions from the plasma.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE