Accession Number:

ADA242622

Title:

Epitaxial Growth of Single Crystal Diamond on Silicon

Descriptive Note:

Project status rept. 15 Aug-14 Sep 91.

Corporate Author:

ADVANCED FUEL RESEARCH INC EAST HARTFORD CT

Personal Author(s):

Report Date:

1991-09-14

Pagination or Media Count:

6.0

Abstract:

We have performed a series of depositions on Si100 surfaces using the hot filament reactor. The depositions are fairly short in duration 75 minutes so that the nucleation is observable. The deposition conditions are total pressure 10 torr, T sub sub 1000 C, T sub filament-1850 deg C, and 1 CH sub 4 in H sub 2. The surfaces are prepared using various combinations of scratching, degreasing, and spin etching. The scratching preparation uses 6 diamond paste. Unscratched Si100 has virtually no nucleation after 75 minutes of deposition. This is not surprising since other researchers find that 10-17 hours of CVD is required to cover fully the SiC buffer layer on unscratched Si 116Belton et al., 1989. Future work will extend deposition times to 10 hours in the hot filament reactor and shorter times in the high growth torch reactor. By comparison, scratched Si100 shows significant nucleation after 75 minutes of deposition.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE