Progress Report on the Growth of ZnTe By Atmospheric Pressure Metal- Organic Vapour Phase Epitaxy (APMOCVD)
Annual rept. 15 Sep 1989-14 Sep 1990
UNIVERSITY OF MANCHESTER INST OF SCIENCE AND TECHNOLOGY (UNITED KINGDOM) SOLIDSTATE CHEMISTRY GROUP
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The growth temperature and the VIII gas phase ratio have been optimised for ZnTe epitaxy on GaAs by APMOCVD. These are a Tg 430 C and a VI II 4. Material prepared under these conditions was found to be of high crystalline quality, comparable to the one obtained by MBE, and of high purity as demonstrated by the presence of the free exciton transition in low temperature PL spectra. Assuming the PL assignment is correct, the GaAs substrate and the organometallics are the main origins of layer contamination. Electrical properties are yet to be investigated and cannot be measured until reliable ohmic contacts can be made. The growth of ZnTe on GaSb substrates was not successful due to difficulties with pre-growth surface treatment of the substrate. A satisfying way of removing the oxide layer is being investigated.