Accession Number:

ADA242266

Title:

An RF Performance Sensitivity and Process Yield Model for MIMIC CAD applications. MIMIC Program. Phase 3

Descriptive Note:

Final rept. 1 May 89-1 Aug 91,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1991-09-16

Pagination or Media Count:

101.0

Abstract:

A physics based large-signal Gallium Arsenide MESFET model and circuit simulator has been developed to predict and optimize the yield of Gallium Arsenide MESFET designs before fabrication. Device acceptance criteria include both small- and large-signal RF operating characteristics such as small- signal gain, maximum power-added efficiency, and output power at 1dB gain compression. Channel doping details are described directly from processing specifications for material deposition, ion implantation, and implant annealing with the use of SUPREM 3.5, a process simulator developed at Stanford University. Monte Carlo techniques are used to estimate yield when disturbances in the MESFET parameters are modeled as multivariate Gaussian distributions. The yield estimator is integrated with an optimizer so that a design can be centered for maximum yield in the presence of process disturbances.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE