Accession Number:

ADA242167

Title:

Epitaxial Growth and Electro-Optical Properties of Metal GaAs Superlattices

Descriptive Note:

Final rept. 1 Jun 87-31 May 90,

Corporate Author:

CALIFORNIA UNIV LOS ANGELES

Personal Author(s):

Report Date:

1990-05-31

Pagination or Media Count:

24.0

Abstract:

The objective of this research program is to investigate the metal systems that are thermodynamically stable on Gallium arsenide. Moreover, for novel device applications, the metal films should be epitaxial on GaAs, and that means the lattice mismatch between metal and GaAs should be as small as possible. From this stable metal contacts, we can then explore new properties and physics of the metalGaAs heterojunction. Furthermore, new metal quantum well and superlattice devices can be fabricated, and a new generation of detectors and devices with improved performance will emerge. The theoretical calculation of the metal quantum well QW photodetector has shown that the device can be served as a long wavelength infrared detector with an absorption efficiency one order of magnitude higher than a semiconductor QW device e.g., AlGaAsGaAsAlGaAs. This enhancement is due to the higher oscillation strength of the metal intersubband transition.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE