Luminescence and Electroluminescence Properties of Nd, Tm, Yb Doped GaAs and Some II-VI Compounds
Annual rept. 15 Jul 90-14 Aug 91,
OHIO UNIV ATHENS DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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This report describes the progress accomplished during the first year of research on luminescence and electroluminescence properties of Nd, Tm, Yb doped GaAs and some II-IV compounds. The photoluminescence study of GaAsYb shows no 4f emission. The PL spectra of CdSNd were recorded and about 20 sharp emission lines were observed. This indicates that in CdS, Nd3 occupies different symmetry sites. The PL of CdSYb at 9.3 K reveals five sharp lines in the 985 nm - 990 nm range and a strong broader line at 998.3 nm. Electroluminescence of ZnSTm embedded in a Boric matrix was observed for the first time. Strong emission was observed at room temperature as well as at low temperature revealing only five groups of strong sharp lines which are assigned to transitions within the 4f shell of Tm3. EL intensity was investigated as a function of voltage, temperature and frequency. The voltage dependence of the EL intensity shows that the direct impact excitation mechanism is a dominant one. Photoluminescence spectra of InPYb at different temperatures consist of sharp peaks related to Yb3 transition.
- Physical Chemistry