Accession Number:

ADA241505

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films

Descriptive Note:

Quarterly letter rept. 1 Jul-30 Sep 91,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Report Date:

1991-09-30

Pagination or Media Count:

52.0

Abstract:

Investigations concerned with the out-diffusion of ion-implanted C atoms to the surface of monocrystals of Cu100 under supersaturated conditions, the use of surfactants such as Ag to reduce the surface energy of the C species and studies involving the diffusion of dissolved C down thermal gradients have resulted in the formation of graphite at the surface or interface of the Cu crystals. Metal contacts of Ti deposited below 400 deg C have been shown to be rectifying. The Schottky barrier height has been measured by ARUPS to be 1.0 eV. Deposition or annealing above this temperature results in the formation of Ti-C bonding and the gradual enhancement of ohmic behavior. Studies concerned with the deposition of TiN by RPCVD have been initiated. It has also been shown that processing techniques, both growth and annealing, have a significant effect on the electrical conductivity of diamond films, particularly at low temperatures. Activation energies from 0.1 eV to 1.1 eV natural diamond1.4 eV were measured. Finally the potential for diamond devices in microwave and millimeter wave applications have been extensively examined, the results of which are reported herein.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE