Accession Number:

ADA240913

Title:

European Conference on Molecular Beam Epitaxy and Related Growth Methods (6th) Held in Tampere, Finland on 21-14 April 1991

Descriptive Note:

Corporate Author:

TAMPERE UNIV OF TECHNOLOGY (FINLAND)

Personal Author(s):

Report Date:

1991-04-24

Pagination or Media Count:

259.0

Abstract:

Topics covered during this symposium includes 1 Local growth of silicon MBE layers 2 Doping during growth 3 Electrical characterisation for silicon 4 Design and performance of multiwafer MBE system used in HEMT production 5 Indium free mounting technique retrofit to a 2 inch in bonded wafer substrate holder 6 Structure, properties, and purity of pyrolytic boron nitride crucibles 7 The temperature dependence of the critical layer thickness in in0.36 Ga0.64 AsGaAs single quantum wells 8 Large piezoelectric fields 9 In Situ monitoring of III-V MBE growth processes using laser light scattering 10 In Situ control of epitaxial growth using reflectance difference 11 Surface stoichiometry variation in atomic layer molecular beam epitaxy of galium arsinide 12 Influence of growth temperature and 13 Nonlinear optic in situ diagnostic of crystalline film.

Subject Categories:

  • Crystallography
  • Atomic and Molecular Physics and Spectroscopy
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE