Accession Number:

ADA239971

Title:

UPS, XPS, and HREELS Characterization of Trimethyl Indium Adsorbed on Si(110)

Descriptive Note:

Corporate Author:

EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY

Report Date:

1991-01-01

Pagination or Media Count:

21.0

Abstract:

In the past decade, organometallic chemical vapor deposition OMCVD of III-V compound semiconductors has experience explosive growth one such system having applications in optoelectronic and microwave devices is Indium Phosphide. The actual reaction mechanisms controlling the deposition process is reported. Trimethylindium TMIn, is a common organometallic precursor in InP OMCVD, on Si110 substrates. The techniques of Ultraviolet Photoelectron Spectroscopy, X Ray Photoelectron Spectroscopy, High Resolution Electron Energy Loss Spectroscopy, and Resonance Enhanced Multiphoton Ionization are utilized to investigate the thermal decomposition of Trimethylindium TMIn or silicon substrates under various surface coverage conditions. In the 140-1100 K temperature range, three regions of varying characteristics are found. Below 630 K, TMIn adsorbs molecularly with little further reaction on the substrate. In the 630-890 K region, the decomposition of adsorbed TMIn appears to take place. The presence of CHxad xor3, silicon-hydrogen, and silicon-carbon species on the surface are confirmed by UPS andor HREELS. XPS shows a steady shift to lower binding energies for the C1s photoelectrons and UPS shows a see-saw-like shifting for the In 4d photoelectrons, first to lower then to higher binding energies. REMPIMS measurements provide evidence for the steady-state desorption of methyl radicals in this thermal region. Above 890K, it appears that a thermally more complex process persist whereby In desorbs and C is deposited onto the surface.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE