Accession Number:

ADA239732

Title:

Molecular Beam Epitaxy 1990: Proceedings of the International Conference on Molecular Beam Epitaxy (6th) Held in La Jolla, California on 27-31 August 1990.

Descriptive Note:

Final rept., Conference Proceedings

Corporate Author:

CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1991-01-01

Pagination or Media Count:

1157.0

Abstract:

This issue of the Journal of Crystal Growth contains the papers presented at the Sixth International Conference on Molecular Beam Epitaxy MBE- VI. The scope of the conference covered the entire spectrum of MBE technology, from material aspects of growth, characterization, to physics and devices. Topics included growth kinetics, doping, migration-enhanced epitaxy, reflection, high-energy-electron diffraction, quantum wells and wire, gas-source MVE, MOMBE, CBE, and structures based on gallium arsenides, indium phosphides, II-VI compounds, antimonides, superconductors, magnetic materials, etc.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Crystallography
  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE