Molecular Beam Epitaxy 1990: Proceedings of the International Conference on Molecular Beam Epitaxy (6th) Held in La Jolla, California on 27-31 August 1990.
Final rept., Conference Proceedings
CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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This issue of the Journal of Crystal Growth contains the papers presented at the Sixth International Conference on Molecular Beam Epitaxy MBE- VI. The scope of the conference covered the entire spectrum of MBE technology, from material aspects of growth, characterization, to physics and devices. Topics included growth kinetics, doping, migration-enhanced epitaxy, reflection, high-energy-electron diffraction, quantum wells and wire, gas-source MVE, MOMBE, CBE, and structures based on gallium arsenides, indium phosphides, II-VI compounds, antimonides, superconductors, magnetic materials, etc.
- Electrical and Electronic Equipment
- Lasers and Masers
- Electricity and Magnetism
- Atomic and Molecular Physics and Spectroscopy
- Quantum Theory and Relativity
- Solid State Physics