Accession Number:

ADA239639

Title:

Limited Reaction Processing for Semiconductor Materials Preparation

Descriptive Note:

Final rept. 1 Nov 87-31 May 91,

Corporate Author:

STANFORD UNIV CA

Personal Author(s):

Report Date:

1991-07-26

Pagination or Media Count:

12.0

Abstract:

Limited Reaction Processing LRP is a layer deposition technique based upon a combination of rapid thermal processing RTP and chemical vapor deposition. Under this contract, the versatility of LRP has been demonstrated in research on epitaxial growth in three different materials systems. This work has spurred research at several other laboratories in the area of epitaxial growth and applications involving RTP techniques, particularly in the Si1-xGex materials system. We have fabricated the first CVD-grown SiSi1-xGex heterojunction bipolar transistors using this technique, with maximum oscillation frequencies on the order of 40 GHz. In the III-V area, we have explored arsine alternative sources for GaAs expitaxy which greatly improve the safety of MOCVD. We have also developed a new atomic layer growth technique by combining LRP with an alternating gas pulse method.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE