Accession Number:

ADA238818

Title:

Deposition of InP-ON-Si Substrates for Monolithic Integration of Advanced Electronics

Descriptive Note:

Final rept.,

Corporate Author:

SPIRE CORP BEDFORD MA

Personal Author(s):

Report Date:

1991-04-19

Pagination or Media Count:

119.0

Abstract:

This report describes the development of a technology for the deposition of InP and lattice-matched InGaAs onto Si and GaAs substrates. Such structures are useful for the monolithic integration of high speed optical and electronic devices. The growth technique employed in this program in metalorganic chemical vapor deposition MOCVD, and GaAs buffer layers are employed to improve the quality of the InP epilayers. Other deflect-reduction techniques studied include the use of strained layers and thermal annealing. Characterization methods include transmission electron microscopy, photoluminescence PL,PL decay, Hall effect, electrochemical C-V profiling, and deep-level transient spectroscopy. Junction field-effect transistors and PIN photodiodes have been fabricated and characterized on Si, GaAs, and InP substrates, and their performance characteristics compared.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE