Design and Development of Low Noise, High Speed High Electron Mobility Transistors
Final rept. 1 Jul 90-31 Dec 91,
SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Pagination or Media Count:
This report summarizes work performed under contract DAAL03-90-C-0021. Under this study the moments of the Boltzmann Transport Equation were applied to investigate the performance of HEMT. The results of the simulations are compared to experimental measurements for a related device structure. Numerical solutions of quantum Liouville equation were also introduced to investigate transport perpendicular to the conducting channel under the device contacts to provide insight as to how carriers enter the 2-D electron gas. The goals of this Phase I study were to demonstrate that the cost of fabricating low noise transistors could be reduced by using numerical simulation during the early stage of design. The study was successful.
- Electrical and Electronic Equipment
- Solid State Physics