Optics with Semiconductors: Ultrafast Physics for Devices
Final rept. 1 Oct 1987-30 Sep 1990
PRINCETON UNIV NJ
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Femtosecond optical pulses have been used to study ultrafast phenomena in semiconductors that may be useful for future high-bit rate optoelectric and photonic devices. A complete characterization of femtosecond pulse formation in a dye laser has been performed. Several experiments have been performed in different semiconductors with emphasis on nonlinearities near the band edge in Gallium arsenide. We find large refractive and adsorptive nonlinearities near the band edge, which are due to many-body hot-carrier effects. Other materials which we have tested, such as crystalline or amorphous silicon, appear less promising for device applications. Waveguide switches and spatial light deflectors using the AC Stark effect nonlinearity have also been analyzed.
- Electrooptical and Optoelectronic Devices