An Optically Activated Modulator and GaAs-GaAlAs Compound Semiconductor Channel Waveguide
Final rept. 1 Sep 90-30 Apr 91,
PHYSICAL OPTICS CORP TORRANCE CA
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We proposed and then developed for the first time an optically activated modulator OAM and modulator array on GaAs-GaAlAs compound semiconductor channel waveguides. A channel waveguide device with an optical activation window of 5 um in diameter was fabricated. Optical activation was produced by using HeNe 631.8 nm wavelength as the free-carrier generator and a 1.3 um laser as the signal carrier. Thirty-three percent modulation depth was observed and 10-2 index modulation was experimentally confirmed on an OAM working in the phase modulation regime. OAMs working in both phase- and cutoff- modulation regimes were theoretically determined by considering the fluctuation of the waveguide confinement factor. 8.2dB modulation depth was observed on an OAM working at the cutoff regime. Furthermore, the activation source is in the mW power region which significantly reduces the size and cost of all optical switching devices.
- Electrical and Electronic Equipment