Accession Number:

ADA238595

Title:

InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications

Descriptive Note:

Professional Paper

Corporate Author:

NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Personal Author(s):

• Johnson, G. A.
• Biendender, M. D.
• Kapoor, V. J.

Report Date:

1991-06-01

Pagination or Media Count:

6.0

Abstract:

In GaAs MISFETs with 0.7 micron gate lengths and 0.2 mm gate widths have demonstrated an output power density of 0.92 Wmm at 18 GHz with a corresponding power gain and power-added efficiency of 3.2 dB and 29, respectively. At 20 GHz, an output power density of 0.79 Wmm was obtained with a corresponding gain and power-added efficiency of 3.0 dB and 23, respectively.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• DENSITY
• POWER GAIN
• POWER
• OUTPUT
• EFFICIENCY

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE