InP and InGaAs Submicron Gate Microwave Power Transistors for 20 GHz Applications
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
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In GaAs MISFETs with 0.7 micron gate lengths and 0.2 mm gate widths have demonstrated an output power density of 0.92 Wmm at 18 GHz with a corresponding power gain and power-added efficiency of 3.2 dB and 29, respectively. At 20 GHz, an output power density of 0.79 Wmm was obtained with a corresponding gain and power-added efficiency of 3.0 dB and 23, respectively.
- Electrical and Electronic Equipment
- Solid State Physics