Accession Number:

ADA238521

Title:

Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

Descriptive Note:

Semi-Annual letter rept. 1 Jan-30 Jun 1991

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1991-06-01

Pagination or Media Count:

45.0

Abstract:

An ALE deposition system, as well as our initial results of the ALE growth of GaN, are described. The deposition system was fabricated in-house. It is high vacuum capable and allows the introduction of up to 16 gases without mixing. The substrates travel under different zones, each of which allows the adsorption or decomposition of one gas species at a time. Continuous crystalline GaN films were grown on 0001 alpha-SiC and analyzed by Auger spectroscopy, scanning electron microscopy and electron diffraction. Research concerned with the heteroepitaxial deposition of cubic boron nitride c-BN using different substrates and deposition technologies has also been conducted. Films were deposited and analyzed using the techniques of reflection high energy electron diffraction RHEED, x-ray photoelectron spectroscopy XPS, low energy electron diffraction LEED, x-ray diffraction XRD, scanning electron microscopy SEM, transmission electron microscopy TEM, and Fourier transform infrared spectroscopy FT-IE.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE