Pseudomorphic Semiconducting Heterostructures from Combinations of AlN, GaN and Selected SiC Polytypes: Theoretical Advancement and Its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development
Semi-Annual letter rept. 1 Jan-30 Jun 1991
NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING
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The initial stages of growth of AIN and GaN on the Si 0001 face of alpha6H0-SiC and the 0001 face of sapphire have been studied. The growth of both nitrides on the alpha6H-SiC substrates occurred on a thin of Si3N4. No significant surface chemical changes were observed when the films were grown on sapphire. The deposition of GaN on sapphire appeared to follow a Stranski- Krastanov mode of growth that on SiC showed characteristics of three-dimensional growth-possibly due to the Si3N4. The AIN grew on both substrates either layer- by-layer or, more likely, by the Stranski-Krastanov mode. The gas-source MBE for the growth of SiC-AIN-GaN heterostructures has been commissioned. Growth of single crystal 100 Beta-SiC on 3 degrees off axis Si100 substrates at 1075 C has been successful. Two classes of computer codes have also been developed for theoretical modeling of pseudomorphic heterostructures of complex systems.