Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
NORTH CAROLINA STATE UNIV AT RALEIGH
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As the first step in the chemically-controlled atomic layer epitaxy ALE of SiC, research has been conducted regarding the ALE of Si. Good quality single crystal epitaxial films of Si on off-axis 100 Si have been produced in the Davis group. Equipment related to the deposition of high-quality Si only is virtually completed in the Bedair group. Dichlorosilane has been used or is being considered by both groups. A deposition system that will achieve ALE of CeO2 on Si has also been designed.
- Electrical and Electronic Equipment