Accession Number:

ADA238506

Title:

Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization

Descriptive Note:

Semi-Annual rept.

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

1991-06-01

Pagination or Media Count:

17.0

Abstract:

As the first step in the chemically-controlled atomic layer epitaxy ALE of SiC, research has been conducted regarding the ALE of Si. Good quality single crystal epitaxial films of Si on off-axis 100 Si have been produced in the Davis group. Equipment related to the deposition of high-quality Si only is virtually completed in the Bedair group. Dichlorosilane has been used or is being considered by both groups. A deposition system that will achieve ALE of CeO2 on Si has also been designed.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE