Counterdoped High Temperature, Silicon Array Infrared Detector
Final rept. Apr 1986-Apr 1987
UNIVERSAL ENERGY SYSTEMS INC DAYTON OH
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A counterdoped infrared detector system consisting of a silicon substrate doped with boron and divacancies has been created. High purity polycrystalline silicon was further purified by float zoning to reduce the impurity levels still present it was then back doped with boron. Electron irradiation was used to create the divacancies which become the active infrared centers. Boron served to compensate the newly created divacancies thus producing only positively charged divacancies these positively charged divacancies are stable under illumination. The experimental results thus verify the theoretical model postulated by Elliott for counterdoping. A theoretical analysis of multivalent statistics as applied to counterdoped detectors has developed an extended model for counterdoped detectors. This model has identified the relevant parameters which control the operating temperature and figure of merit for the counterdoped detector. The model may be used to optimize doping concentration for the highest background limited infrared photoconductor BLIP operating temperature.
- Infrared Detection and Detectors
- Solid State Physics