Accession Number:

ADA238483

Title:

Counterdoped High Temperature, Silicon Array Infrared Detector

Descriptive Note:

Final rept. Apr 1986-Apr 1987

Corporate Author:

UNIVERSAL ENERGY SYSTEMS INC DAYTON OH

Personal Author(s):

Report Date:

1991-05-01

Pagination or Media Count:

94.0

Abstract:

A counterdoped infrared detector system consisting of a silicon substrate doped with boron and divacancies has been created. High purity polycrystalline silicon was further purified by float zoning to reduce the impurity levels still present it was then back doped with boron. Electron irradiation was used to create the divacancies which become the active infrared centers. Boron served to compensate the newly created divacancies thus producing only positively charged divacancies these positively charged divacancies are stable under illumination. The experimental results thus verify the theoretical model postulated by Elliott for counterdoping. A theoretical analysis of multivalent statistics as applied to counterdoped detectors has developed an extended model for counterdoped detectors. This model has identified the relevant parameters which control the operating temperature and figure of merit for the counterdoped detector. The model may be used to optimize doping concentration for the highest background limited infrared photoconductor BLIP operating temperature.

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE