Quantitative RHEED Studies of MBE Growth of 3-5 Compounds
Final rept. 1 May 1988-30 Apr 1991
TEXAS UNIV AT AUSTIN DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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The objectives of this work have been to develop methods for extracting quantitative information from the Reflection High Energy Electron Diffraction RHEED pattern about the surface structure of nearly perfect crystals prepared by Molecular Beam Epitaxy MBE and to use these techniques to explore in detail the growth of homo-and heteroepitaxial structures involving GaAs, A1As, InAs, and related ternary compounds. The overall problem addressed is the development of highly controlled growth of multilayers, quantum wells, delta doping, Bragg reflectors, and other structures which can then be exploited in advanced electronic and photonic devices.
- Test Facilities, Equipment and Methods