Accession Number:

ADA238248

Title:

Single Molecule Source Reagents for CVD of Beta Silicon Carbide

Descriptive Note:

Monthly rept. 1-30 Jun 1991

Corporate Author:

ADVANCED TECHNOLOGY MATERIALS INC DANBURY CT

Personal Author(s):

• Brown, Duncan W.

Report Date:

1991-06-30

Pagination or Media Count:

4.0

Abstract:

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting point. Use of silicon carbide thin films is hampered, however, by the inability to reproducibly grow stoichiometric films free from excess silicon or carbon. The principal difficulty is that absolutely reproducible flows of the source gases cannot be provided with existing gas flow control equipment. The very finest gas flow control equipment has been used in the CVD systems, but small disparities remain between successive deposited films. The production of practical beta silicon carbide devices has been hindered by the lack of a reproducible process for deposition of stoichiometric beta silicon carbide films.

Descriptors:

• *BREAKDOWN(ELECTRONIC THRESHOLD)
• HIGH POWER
• SOURCES
• CONTROL SYSTEMS
• HIGH RATE
• PRODUCTION
• MOLECULES
• MATERIALS
• HIGH TEMPERATURE
• THIN FILMS
• FILMS
• ELECTRONIC EQUIPMENT
• VOLTAGE
• SEMICONDUCTORS
• CARBON
• GASES
• DEPOSITION
• SILICON
• THERMAL CONDUCTIVITY
• CHEMICAL AGENTS
• FLOW
• REPRODUCIBILITY
• MELTING POINT
• SILICON CARBIDES
• STOICHIOMETRY
• HIGH VOLTAGE
• GAS FLOW

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE