Accession Number:

ADA238198

Title:

Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals

Descriptive Note:

Final rept. 1 May 88-30 Apr 91,

Corporate Author:

COLORADO UNIV AT BOULDER

Personal Author(s):

Report Date:

1991-05-01

Pagination or Media Count:

19.0

Abstract:

The goal in the work has been to investigate the microscopic basis for materials removal using neutral atoms and radicals at high kinetic energies 1-10 eV. With support from this ARO grant, it was possible to develop and characterize a new beam source of translationally fast atoms, radicals, and molecules. This beam source is based on a laser vaporization technique. The mechanisms of laser vaporization have been pioneered by many groups in the past several years the method can be used to produce a variety of reactive neutral atoms, radicals, metal vapors, and other compounds with high kinetic energies. In this work, the laser vaporization process is used to produce a beam source of energetic, reactive neutral species which can be used to study collisions with semiconductor surfaces for fundamental investigations of etching and deposition.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Particle Accelerators

Distribution Statement:

APPROVED FOR PUBLIC RELEASE