Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals
Final rept. 1 May 88-30 Apr 91,
COLORADO UNIV AT BOULDER
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The goal in the work has been to investigate the microscopic basis for materials removal using neutral atoms and radicals at high kinetic energies 1-10 eV. With support from this ARO grant, it was possible to develop and characterize a new beam source of translationally fast atoms, radicals, and molecules. This beam source is based on a laser vaporization technique. The mechanisms of laser vaporization have been pioneered by many groups in the past several years the method can be used to produce a variety of reactive neutral atoms, radicals, metal vapors, and other compounds with high kinetic energies. In this work, the laser vaporization process is used to produce a beam source of energetic, reactive neutral species which can be used to study collisions with semiconductor surfaces for fundamental investigations of etching and deposition.
- Manufacturing and Industrial Engineering and Control of Production Systems
- Particle Accelerators