The Growth of Ultrathin Epitaxial Intermetallic Films
Technical rept. 1 Aug 89-31 Jul 90,
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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The growth of iron aluminide and NiAl intermetallic compounds on III-V substrates has been studied using reflection high-energy electron diffraction RHEED, transmission electron diffraction TEM, and selected area electron channeling patterns SAECP. Procedures for the growth of both of these intermetallics with layer-by-layer control were developed. The quality of the films on indium phosphides 100 substrates exceeds those grown on gallium arsenides 100 substrates due to the lower lattice mismatch. The films are stable to at least 820K. TEM measurements indicate that the burgers vector of misfit dislocations is a complete a100. SACP, TEM, and TEM indicate that the film relaxation approximates the Matthews Blakeslee prediction. Even this was surprising in light of the layer by layer growth after relaxation since the type of dislocation that forms cannot glide to the interface to relieve the strain. Preliminary semiconductor - intermetallic - semiconductor structures have been grown. The quality of the interfaces is being assessed.
- Inorganic Chemistry
- Solid State Physics