Accession Number:

ADA237795

Title:

Laser Probing of the Kinetics and Dynamics of III - V Semiconductor Growth

Descriptive Note:

Annual rept. 1 Feb 90-31 Jan 91,

Corporate Author:

JOINT INST FOR LAB ASTROPHYSICS BOULDER CO

Personal Author(s):

Report Date:

1991-01-31

Pagination or Media Count:

7.0

Abstract:

Work is carried out on the dynamics of Ga, In, and As scattering, sticking, and desorption from silicon single crystals using laser induced fluorescence probing of the Ga and In atoms and As dimer gas phase species. Desorption kinetics are used to probe the InAs and GaAs heterostructures on silicon and the islanding behavior that occurs for the mixed systems. It is observed that islands form readily when In or Ga are grown on a prelayer of As on Si100. State-resolved detection of As2 species is demonstrated by laser- induced fluorescence probing for the first time. Laser multiphoton ionization detection of the III-V semiconductor species is also demonstrated. A technique is being developed to measure surface migration rates of epitaxial species by using a two laser, desorption and detection scheme.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE