In-Situ Diffraction and Imaging Studies of Heteroepitaxial Growth of Semi-Conductors
Final technical rept. 1 Aug 87-31 Jul 90,
ARIZONA STATE UNIV TEMPE DEPT OF PHYSICS
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Our work emphasizes in-situ characterization of the initial stages of heteroepitaxial growth of semiconductors and ultrathin film silicides using advanced instrumentation and techniques, including high resolution reflection high energy electron diffraction RHEED, a UHV scanning electron microscope with micro-probe RHEED and a UHV scanning transmission electron microscope with micro-probe RHEED and a UHV scanning transmission electron microscope UHV-STEM. Systems of interest include vicinal Si100, germanium on silicon, and ultrathin film silicides. Specific instrument and technique developments include Demonstration that Auger lineshapes can be used to separate coexisting silicide phases in a partially reacted ultrathin film Demonstration that quasi- kinematic RHEED intensity calculations can be used to identify epitaxial structures Imaging of single atomic height steps with STEM Visualization of submonolayers of germanium and various metals using biased secondary electron imaging Auger imaging at the highest spatial resolution obtained anywhere.
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