Accession Number:

ADA237710

Title:

Defect Reductions in Epitaxial Growth Using Superlattice Buffer Layers

Descriptive Note:

Final rept. 1 Apr 88-30 Sep 90,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1990-12-01

Pagination or Media Count:

172.0

Abstract:

The final report is based on the thesis of two Ph.D. students working in the area of defect reduction using strained layer superlattices. A variety of attempts to reduce the defects density in GaAs epitaxial films grown on Si substrates using annealing, InGaAs-GaAsP strained-layer superlattices, strained- layer superlattices combined with annealing, and the selective etching are presented. Both conventional furnace annealingslow cooling and rapid thermal annealing were effective to eliminate microtwins and stacking faults. However, the conventional furnace annealingslow cooling showed more promising results in terms of dislocations reduction. This conventional furnace annealing reduces dislocation density to about high 107 cm-2.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE