Failure Mechanisms on GaAs Integrated Circuits: Electromigration on GaAs
Final technical rept. Apr 1988-Jun 1990
GENERAL ELECTRIC CO SYRACUSE NY
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The objective of this program was to investigate two aspects of electromigration on GaAs devices 1 the rate of electromigration of typical metallizations on GaAs, and 2 the occurrence of electromigration assisted interdiffusion of the gate metal and the GaAs in GaAs FETs. A life test was conducted, and the rate of electromigration was found to be influenced by the type of barrier metallization used. It was found that electromigration is no worse on GaAs than on silicon. It was found that interdiffusion of the gate metal into the GaAs was not significant at the test conditions used during the life test.
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