Accession Number:

ADA235211

Title:

Thickness Measurements of Silicon Films Using Partial Coherence Interferometry.

Descriptive Note:

Final technical rept. Oct 1988-Sep 1989,

Corporate Author:

NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Personal Author(s):

Report Date:

1991-02-01

Pagination or Media Count:

28.0

Abstract:

An optical system composed of a Michelson interferometer, a short coherence length edge-emitting diode ELED, and a fiber-optic-coupler probe has been described and used to measure the thickness of thin silicon charge-coupled device CCD films. The measurement precision for samples with a thickness of the order of 10 micrometers is better than 0.1 micrometers and the range of thickness that can be measured can be from a few micrometers to hundreds of micrometers if a suitable source is used. The fiber probe assembly is adaptable for remote in situ measurements of samples within an etching chamber, and the measurement results can be used to control the sample etching process. The fiber probe also allows for localized measurements at selected positions across the area of the sample, and these results can be used for control of thickness uniformity.

Subject Categories:

  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE