Accession Number:

ADA235025

Title:

Superconducting High TC Thin Film Vortex-Flow Transistor

Descriptive Note:

Final rept. 1 Aug 1990-31 Mar 1991 on Phase 1

Corporate Author:

HYPRES INC ELMSFORD NY

Personal Author(s):

• Hohenwarter, G. K.

Report Date:

1991-03-28

Pagination or Media Count:

29.0

Abstract:

A device is investigated based on vortex-flow in a superconducting thin-film. This transistor-like device is referred to as a superconducting flux- flow transistor SFFT. Alongside step edge and grain boundary tunneling junctions the SFFT appears to be a promising candidate for active high temperature circuits. SFFT operation relies on the control of electrical characteristics at the output terminals by a magnetic field at the device boundaries. This field can be provided by the flow of a current in a control line the devices input resistance hence will be very low. Substantial power grain can result. The low input resistance, yet moderate output resistant of the device appears beneficial for interfacing digital Josephson junction electronics with semiconductor circuits. This was proven in an experiment where Josephson junction was connected to a SFFT.

Descriptors:

• *MAGNETIC FIELDS
• *TRANSISTORS
• CONTROL
• DIGITAL SYSTEMS
• EDGES
• FLUX(RATE)
• HIGH TEMPERATURE
• RESISTANCE
• SUPERCONDUCTORS
• THIN FILMS
• SEMICONDUCTOR DEVICES
• VORTICES
• ELECTRICAL PROPERTIES
• FLOW
• CIRCUITS
• TUNNELING
• JUNCTIONS
• JOSEPHSON JUNCTIONS
• GRAIN BOUNDARIES
• TERMINALS
• INPUT
• OUTPUT

Subject Categories:

• Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE