Luminescence and Lasing in II-VI Semiconductors.
Final rept. 11 Dec 1987-31 Aug 1990
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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The objective of this contract was to develop a method for growth of bulk semiconducting material, suitable for monolithic infrared focal plane detectors, light emitting diodes, and laser structures. The project focused on narrow band gap HgMnTe alloys, semimagnetic semiconductors. HgMnTe is an infrared detector material with properties similar to those of HgCdTe in particular, HgMnTe electroluminescence more efficiently than HgCdTe, and p-type HgMnTe has higher conductivity than comparable p-HgCdTe both features are advantageous in device applications.
- Solid State Physics