Accession Number:

ADA234315

Title:

A Program in the Chemistry of Electronic Materials. Task 1. New Organometallic Precursors for the Low Pressure Chemical Vapor Deposition of Refractory Materials for Electronics

Descriptive Note:

Final rept. 1 Jul 1985-31 Dec 1990

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY

Report Date:

1991-02-28

Pagination or Media Count:

13.0

Abstract:

The principal focus of this Project was the design and synthesis of volatile organometallic precursors for the LPCVD of AlN, SiC, and other materials of interest for applications in electronics. The pyrolytic decomposition of theses compounds were investigated using mass spectrometry and IR spectroscopy and the resultant thin films examined by Auger spectroscopy and SEMTEM to determine the composition, microstructure, and purity of the phases present. Through the use of selected precursors of this type, high quality, films of stoichiometric AlN and SiC were obtained at temperatures 500 - 800 C well below that employed in previous investigations. Thin films of both AlN and the cuprate superconductors were also prepared by pyrolysis of solution-applied polymeric precursor films.

Subject Categories:

  • Metallurgy and Metallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE