Accession Number:

ADA234130

Title:

Ohmic Contacts to Semiconducting Diamond

Descriptive Note:

Final rept. Oct 1989-Sep 1990

Corporate Author:

NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA

Report Date:

1990-10-01

Pagination or Media Count:

46.0

Abstract:

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10 -9 Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process Metallization of Semiconducting Diamond Mo, MoAu, and MoNiAu Specific Contact Resistance Measurements of Ohmic Contracts to Diamond and Electrical Activation of Boron Implanted into Diamond.

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE