Ohmic Contacts to Semiconducting Diamond
Final rept. Oct 1989-Sep 1990
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
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Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10 -9 Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process Metallization of Semiconducting Diamond Mo, MoAu, and MoNiAu Specific Contact Resistance Measurements of Ohmic Contracts to Diamond and Electrical Activation of Boron Implanted into Diamond.
- Electricity and Magnetism
- Solid State Physics