Accession Number:

ADA232950

Title:

Doping and Diffusion in HgCdTe

Descriptive Note:

Final rept. 15 Jun 1987-30 Nov 1990

Corporate Author:

WAYNE STATE UNIV DETROIT MI DEPT OF PHYSICS

Personal Author(s):

Report Date:

1991-01-28

Pagination or Media Count:

71.0

Abstract:

The structural properties and electrical activity of impurities indium, arsenic, antimony and self-interstitials mercury, cadmium, tellurium in CdTe and HgCdTe alloys have been studied by theoretical and computer calculations, The problems addressed included - the source of the midgap tunneling levels in Hg-rich HgCdTe, - the cause of electrical inactivity in In- doped CdTe grown by non-photoassisted molecular beam epitaxy MBE, - identification of paths for impurity and self-diffusion, - the effects of lattice distortion on defect properties and interaction.

Subject Categories:

  • Inorganic Chemistry
  • Metallurgy and Metallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE