Doping and Diffusion in HgCdTe
Final rept. 15 Jun 1987-30 Nov 1990
WAYNE STATE UNIV DETROIT MI DEPT OF PHYSICS
Pagination or Media Count:
The structural properties and electrical activity of impurities indium, arsenic, antimony and self-interstitials mercury, cadmium, tellurium in CdTe and HgCdTe alloys have been studied by theoretical and computer calculations, The problems addressed included - the source of the midgap tunneling levels in Hg-rich HgCdTe, - the cause of electrical inactivity in In- doped CdTe grown by non-photoassisted molecular beam epitaxy MBE, - identification of paths for impurity and self-diffusion, - the effects of lattice distortion on defect properties and interaction.
- Inorganic Chemistry
- Metallurgy and Metallography
- Solid State Physics