Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials
Annual rept. 15 Nov 1989-14 Nov 1990
STANFORD UNIV CA DEPT OF MATERIALS SCIENCE AND ENGINEERING
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Research progress on the study of stresses and mechanical behavior of microelectronic thin films is reported. Specialized instruments have been developed to study stress relaxation in metal and semiconductor thin films, diffusion of water in passivation films and crystallization of amorphous silicon films. Finite element techniques have been used to determine stresses in passivated interconnect metal lines. These stresses have been used in a model of interconnect metal cracking that has been developed. It has been shown that the high concentrations of oxygen present in LRP Si-Ge films greatly inhibits misfit dislocation formation.