Accession Number:

ADA232779

Title:

High Quality Three Dimensional Electron Gases in Semiconductors

Descriptive Note:

Final rept. 1 Jan 1988-31 Dec 1990

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA

Personal Author(s):

Report Date:

1991-01-08

Pagination or Media Count:

26.0

Abstract:

We have successfully pursued the construction of high quality three- dimensional electron gases by the growth of wide parabolic GaAs quantum wells with modulation doping. The concept has worked -- by growth of wide, specially shaped wells with remote doping, we can allow high mobility electrons to spread out over regions thousands of Angstroms thick and have three-dimensional behavior without the impurity scattering and carrier freezeout of conventional semiconductors. Electron mobilities of several hundred thousand cm2Vs have been achieved. The wide parabolically shaped well system is fundamentally new, and the structures are showing a variety of new behavior. Electrical quantum conductivity phenomena due to occupancy of several subbands have been observed. Cyclotron resonance, plasma resonance, and coupled cyclotronplasma resonances have been found and all have characteristics of a three-dimensional gas in a parabolic potential.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE