In BASED III-V Microstructures with Novel Electronic Properties
Final rept. 15 Sep 1986-14 Feb 1990
CALIFORNIA INST OF TECH PASADENA
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This program addresses the development of microstructures for high density and high speed electronics. The molecular beam epitaxy technology for InAs and GaSb were developed for growth in GaAs substrates. Three new single barrier negative resistance devices were demonstrated. Double barrier negative resistance devices based on InAsAlSbInAsAlSbInAs heterostructures were fabricated. These currently hold all the power and frequency records.
- Electrical and Electronic Equipment