Accession Number:

ADA232695

Title:

In BASED III-V Microstructures with Novel Electronic Properties

Descriptive Note:

Final rept. 15 Sep 1986-14 Feb 1990

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

Report Date:

1990-10-30

Pagination or Media Count:

98.0

Abstract:

This program addresses the development of microstructures for high density and high speed electronics. The molecular beam epitaxy technology for InAs and GaSb were developed for growth in GaAs substrates. Three new single barrier negative resistance devices were demonstrated. Double barrier negative resistance devices based on InAsAlSbInAsAlSbInAs heterostructures were fabricated. These currently hold all the power and frequency records.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE