Synthesis and Characterization of Indium-Arsenic Compounds Containing a Four-Membered In-Ad-In-As or In-As-In-Cl Ring: Crystal Structures of ((Me3SiCH2) 2InAs(SiMe3)2)2 and (Me3SiCH2)2InAs(SiMe3)2In(CH2SiMe3)2Cl
DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
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Recently, organogallium-arsenic compounds containing four-membered rings consisting of mixed-bridging of the gallium atoms by one arsenic atom and one halogen atom have been synthesized via dehalosilyation between an organogallium halide and a silylarsine. Until now, our studies regarding the formation of mixed bridge systems involving the heavier elements of Groups III and V have focused only on gallium and arsenic. In order to investigate the generality of this behavior, analogous reactions utilizing an organoindium halide were carried out.