Photoresponse Studies of Ion-Damaged Germanium for Optoelectronic Switch Applications
Final rept. Jun-Oct 1986
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
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In light of the potential of germanium optoelectronic OE switches for OEtime division multiplexing OETDM applications, preliminary research into the effect of crystalline damage on its photoresponse was performed. This document reports the results of this proposed method to decrease the photocurrent decay time for high-speed OE switches.
- Electrical and Electronic Equipment