Accession Number:

ADA232088

Title:

Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices

Descriptive Note:

Final rept. 1 Aug 1988-30 Jun 1990

Corporate Author:

ASTROPOWER INC NEWARK DE

Personal Author(s):

Report Date:

1991-01-01

Pagination or Media Count:

91.0

Abstract:

A new technology for the heteroepitaxial growth of GaAs films on silicon substrates is developed. The process utilizes a combined close-spaced vapor transport CSVT and liquid-phase epitaxy LPE technique. A thin film of GaAs is grown directly on silicon by a close-spaced vapor transport reaction using water vapor as the transport agent. This initial layer is used to seed the subsequent growth of additional layers of GaAs or AlGaAs by LPE. Selective modes of growth on oxide-masked silicon substrates were optimized. Stable light- emitting diodes were fabricated in GaAs-on-silicon material. The process is being scaled for 3-inch diameter substrates.

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE