Optoelectronic III-V Heterostructures on SI Substrates
Annual rept. 15 Sep 1989-14 Sep 1990
COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING
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The objectives of this research program is to investigate the epitaxial growth and properties of heterostructures of the III-V semiconductors, particularly the InGaAsPInP system, on Si substrates. The heterostructures are being grown by gas-source molecular beam epitaxy GSMBE, a technique which have previously used to produce high performance optoelectronic devices using lattice-matched InGaAsInP and LnGaAsPInP heterostructures and to grow high quality InP layers on Si wafers. The research is focused on exploring methods to reduce misfit dislocations and thus achieve InGaAsPInP heteroepitaxial materials suitable for high quality optoelectronic devices on Si substrates. InP and lattice-matched InGaAsP alloys are the primary material for high speed optoelectronic telecommunication systems, and an InP-on-Si materials technology would enable VLSI photonics to become a reality.
- Electrooptical and Optoelectronic Devices